NTGD1100LT1G
Manufacturer:
On Semiconductor
Mfr.Part #:
NTGD1100LT1G
Datasheet:
Description:
MOSFETs TSOP-6 SMD/SMT N-Channel, P-Channel number of channels:2 830 mW 8 V Continuous Drain Current (ID):3.3 A
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 20 V |
| Length | 3.1 mm |
| Width | 1.7 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 6 |
| Resistance | 40 mΩ |
| Height | 1 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| Type | General Purpose |
| Number of Elements | 2 |
| Current Rating | 3.3 A |
| Max Power Dissipation | 830 mW |
| Power Dissipation | 830 mW |
| Number of Channels | 2 |
| Continuous Drain Current (ID) | 3.3 A |
| Drain to Source Voltage (Vdss) | 8 V |
| Element Configuration | Dual |
| Number of Outputs | 1 |
| Drain to Source Resistance | 40 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | 8 V |
| Drain to Source Breakdown Voltage (Vds) | 8 V |
| Gate to Source Threshold Voltage | 600 mV |
| FET Type(Transistor Polarity) | N-Channel, P-Channel |
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